BB302M Datasheet, PDF (8/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M
S11 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 to 1000 MHz (50 MHz step)
S21 Parameter vs. Frequency
90° ^{Scale: 1 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90° ^{Scale: 0.01 / div.}
120°
60°
150°
30°
180°
0°
–150°
–30°
–120°
–90°
–60°
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
.8 ¹
.6
.4
.2
1.5
2
3
4
5
10
0
.2 .4 .6 .8 1 1.5 2 3 4 5 10
–10
–.2
–5
–4
–3
–.4
–2
–.6
–.8 _–1
–1.5
Test Condition : _{VDS= 9 V , VG1 = 9 V}
V_G2S = 6 V , R _G = 120 k Ω
50 to 1000 MHz (50 MHz step)
8