HTT1115S Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – SILICON NPN EPITAXIAL TWIN TRANSISTOR

Gain Bandwidth Product vs.
Collector Current
20
f = 1 GHz
16
V_CE = 2 V
12
V_CE = 1 V
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
HTT1115S
S₂₁ Parameter vs. Collector Current
20
f = 900 MHz
16
VCE = 2 V
12
V_CE = 1 V
8
4
0
12
5 10 20 50 100
Collector Current IC (mA)
Noise Figure vs. Collector Current
5
f = 900 MHz
4
3
V_CE = 1 V
2
V_CE = 2 V
1
0
12
5 10 20 50 100
Collector Current IC (mA)
Rev.3, Aug. 2001, page 7 of 10