HM628512C Datasheet, PDF (7/17 Pages) Hitachi Semiconductor – 4 M SRAM (512-kword x 8-bit)

HM628512C Series
AC Characteristics (Ta = –20 to +70°C, V_CC = 5 V ± 10%, unless otherwise noted.)
Test Conditions
• Input pulse levels: 0.8 V to 2.4 V
• Input rise and fall time: 5 ns
• Input and output timing reference levels: 1.5 V
• Output load: 1 TTL Gate + C_L (100 pF) (HM628512C-7)
1 TTL Gate + C_L (50 pF) (HM628512C-5)
(Including scope & jig)
Read Cycle
HM628512C
-5
-7
Parameter
Symbol Min Max Min Max Unit Notes
Read cycle time
t _RC
Address access time
t _AA
Chip select access time
t _CO
Output enable to output valid
t _OE
Chip selection to output in low-Z
t _LZ
Output enable to output in low-Z
t _OLZ
Chip deselection to output in high-Z t_HZ
Output disable to output in high-Z
t _OHZ
Output hold from address change
t _OH
55
—
70
—
ns
—
55
—
70
ns
—
55
—
70
ns
—
25
—
35
ns
10
—
10
—
ns
2
5
—
5
—
ns
2
0
20
0
25
ns
1, 2
0
20
0
25
ns
1, 2
10
—
10
—
ns
7