HM62V16258B Datasheet, PDF (6/16 Pages) Hitachi Semiconductor – 4 M SRAM (256-kword x 16-bit)

HM62V16258B Series
DC Characteristics
Parameter
Symbol Min Typ*¹ Max Unit Test conditions
Input leakage current
Output leakage current
|I_LI|
—
|I_LO|
—
Operating current
I _CC
—
Average HM62V16258B-7 I_CC1
—
operating
current
—
1
µA Vin = V_SS to V_CC
—
1
µA CS = V_IH or OE = V_IH or WE = V_IL or,
LB = UB =V_IH, V_I/O = V_SS to V_CC
—
20
mA CS = V_IL, Others = V_IH/V_IL, I_I/O = 0 mA
—
70
mA Min. cycle, duty = 100%,
I_I/O = 0 mA, CS = V_IL, Others = V_IH/V_IL
HM62V16258B-8 I_CC1
—
—
65
mA
I _CC2
—
3
15
mA Cycle time = 1 µs, duty = 100%,
I_I/O = 0 mA, CS ≤ 0.2 V,
V_IH ≥ V_CC – 0.2 V, V_IL ≤ 0.2 V
Standby current
I _SB
—
—
0.3
mA CS = V_IH
Standby current
I
*²
SB1
—
1
40
µA 0 V ≤ Vin
CS ≥ V_CC – 0.2 V
I
*³
SB1
—
1
20
µA
Output high voltage
V_OH
2.4
—
—
V
I_OH = –1 mA
V_CC – 0.2 —
—
V
I_OH = –100 µA
Output low voltage
V_OL
—
—
0.4
V
I_OL = 2 mA
—
—
0.2
V
I_OL = 100 µA
Notes: 1. Typical values are at V_CC = 3.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L version.
3. This characteristic is guaranteed only for L-SL version.
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Typ
Max
Input capacitance
Cin
—
—
8
Input/output capacitance C_I/O
—
—
10
Note: 1. This parameter is sampled and not 100% tested.
Unit
pF
pF
Test conditions Note
Vin = 0 V
1
V_I/O = 0 V
1
6