2SK1159 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1159, 2SK1160
5,000
2,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V_GS = 0
Pulse Test
1,000
500
200
100
50
0.2 0.5 1.0 2
5 10 20
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
500
20
V_DD = 100 V
250 V
400
400 V
V_GS
16
V_DS
300
12
200
8
100
V_DD = 400 V
250 V
I_D = 8 A ₄
100 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
V_GS
=
10
V,
V_DD
=•
•
30
V
PW = 2 µs, duty < 1%
200
t_{d (off)}
100
50
t_f
t_r
20
t_{d (on)}
10
5
0.2 0.5 1.0 2
5 10 20
Drain Current I_D (A)
6