2SC4126 Datasheet, PDF (6/8 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4126
S Parameters (Emitter Common)
Test condition V_CE = 5 V, I_C = 5 mA, Z_O = 50 Ω
Freq.
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
0.798
0.659
0.550
0.480
0.438
0.414
0.410
0.406
0.412
0.424
∠S₁₁
(DEG.)
–37.3
–69.4
–93.7
–113.6
–129.8
–143.6
–154.4
–164.7
–174.9
–178.1
S21
13.345
10.696
8.434
6.815
5.684
4.847
4.229
3.750
3.352
3.071
∠S₂₁
(DEG.)
152.3
131.4
117.0
107.3
100.0
94.2
89.4
85.0
81.0
77.4
S12
0.033
0.054
0.067
0.074
0.081
0.087
0.092
0.098
0.104
0.110
∠S₁₂
(DEG.)
69.6
56.0
49.2
47.3
47.0
47.3
48.6
49.5
50.6
51.6
S22
0.898
0.730
0.592
0.502
0.442
0.399
0.366
0.340
0.317
0.299
∠S₂₂
(DEG.)
–20.1
–33.1
–39.3
–42.3
–43.7
–44.4
–45.3
–46.3
–47.4
–48.3
Gmax*¹
(dB)
34.03
26.37
21.96
19.07
16.96
15.28
13.95
12.80
11.78
11.01
Test condition V_CE = 5 V, I_C = 20 mA, Z_O = 50 Ω
Freq.
S11
(MHz)
∠S₁₁
S21
(DEG.)
∠S₂₁
(DEG.)
100
0.501 –75.1 26.789 131.8
200
0.402 –117.1 16.600 111.1
300
0.368 –141.0 11.543 100.7
400
0.347 –157.6 8.823 94.7
500
0.354 –169.0 7.131 89.5
600
0.358 –178.7 5.979 85.8
700
0.370 174.9 5.158 82.3
800
0.380 167.1 4.536 79.2
900
0.400 161.5 4.042 76.5
1000
0.411 157.0 3.677 73.5
Note:
1. Gmax =
1 _{2 ⋅ S212 â‹}
1
2
1 – S₁₁
1 – S₂₂
S12
0.024
0.035
0.044
0.054
0.063
0.074
0.084
0.094
0.104
0.114
∠S₁₂
(DEG.)
62.2
58.5
61.3
63.3
65.0
66.6
66.9
67.3
67.6
67.4
S22
0.683
0.446
0.337
0.282
0.250
0.228
0.208
0.192
0.178
0.165
∠S₂₂
(DEG.)
–36.5
–45.4
–45.6
–44.2
–42.8
–42.1
–42.1
–42.7
–43.2
–43.3
Gmax*¹
(dB)
32.54
26.13
22.40
19.83
17.92
16.36
15.08
13.98
13.03
12.24
6