HB288800A5 Datasheet, PDF (52/66 Pages) Hitachi Semiconductor – FLASH ATA Card

HB288800/640/448/320/256/192/160/128/096/064/032A5
DC Characteristics-3 (Ta = 0 to +60˚C, V_CC = 5.0 V ± 10%)
Parameter
Sleep/standby
current
Sector read
current
Sector write
current
32MB/64MB/ 160MB/192
96MB/
MB/256MB/ 448MB/640
128MB
320MB
MB/800MB
Symbol Typ Max Typ Max Typ Max Unit Test conditions
I _SP1
0.5 1.0 0.7 1.5 1.0 2.0 mA CMOS level (control signal =
V_CC – 0.2 V)
(In Memory card mode and
I/O card mode)
I_CCR (DC) 40 75 40 75 40 75 mA CMOS level (control signal =
V_CC – 0.2 V) during sector
read transfer
I _CCR
80 120 80 120 80 120 mA
(Peak)
I_CCW (DC) 45 75 45 75 45 75 mA CMOS level (control signal =
V_CC – 0.2 V) during sector
write transfer
I _CCW
80 120 80 120 80 120 mA
(Peak)
DC Characteristics-4 (Ta = 0 to +60˚C, V_CC = 3.3 V ± 5%)
Parameter
Sleep/standby
current
Sector read
current
Sector write
current
32MB/64MB/ 160MB/192
96MB/
MB/256MB/ 448MB/640
128MB
320MB
MB/800MB
Symbol Typ Max Typ Max Typ Max Unit Test conditions
I _SP1
0.3 1.0 0.4 1.5 0.5 2.0 mA CMOS level (control signal =
V_CC – 0.2 V)
(In Memory card mode and
I/O card mode)
I_CCR (DC) 25 50 25 50 25 50 mA CMOS level (control signal =
V_CC – 0.2 V) during sector
read transfer
I _CCR
50 80 50 80 50 80 mA
(Peak)
I_CCW (DC) 25 50 25 50 25 50 mA CMOS level (control signal =
V_CC – 0.2 V) during sector
write transfer
I _CCW
50 100 50 100 50 100 mA
(Peak)
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