HL6323MG Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – AlGaInP Laser Diode

Far Field Pattern
1.0
P_O = 30mW
0.8 T_C = 25°C
Perpendicular
0.6
0.4
0.2
Parallel
0
−40 −30 −20 −10 0 10 20 30 40
Angle, θ (deg.)
HL6323MG
Astigmatism vs. Optical Output Power
10
T_C = 25°C
NA = 0.4
8
6
4
2
0
0 10 20 30 40 50
Optical output power, P_O (mW)
Frequency Response
3dB/div ^PO ^{= 3mW}
T_C = 25°C
1M
10M
100M
1G 3G
Frequency (Hz)
Electrostatic Destruction (MIL standard)
100
Forward
80 ^{N = 5 pcs}
∆I_OP ≤ 10%
60
40
20
0
0 _{0.5 1.0} 1.5 2.0 2.5 3.0
Applied voltage (kV)
5