HD74HCT1G04 Datasheet, PDF (5/8 Pages) Hitachi Semiconductor – High speed CMOS inverter using silicon gate CMOS process

HD74HCT1G04
Switching Characteristics
Item
Symbol T_a = 25°C
Min
Typ
Output rise / fall time t_TLH
—
6
t _THL
Propagation delay time t_PLH
—
7.5
t _PHL
—
10
(C_L = 15 pF, t_r = t_f = 6 ns, V_CC = 5 V)
Max
10
12
17
Unit Test Conditions
ns
Test circuit
ns
Test circuit
Item
Symbol
T_a = 25°C
T_a = –40 to 85°C Unit Test Conditions
V_CC Min Typ Max Min Max
Output rise / fall time t_TLH
t _THL
4.5 — 14 25 —
31 ns Test circuit
Propagation delay time t_PLH
4.5 — 11.2 16 —
20 ns Test circuit
t _PHL
4.5 — 16.4 27 —
31
Input capacitance
C_IN
— — 2.5 5 —
5
pF
Equivalent capacitance C_PD
— — 10 — —
—
pF
(C_L = 50 pF, t_r = t_f = 6 ns)
Note: C_PD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
I_CC (opr) = C_PD • V_CC • f_IN + I_CC
5