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HA16138PS Datasheet, PDF (5/20 Pages) Hitachi Semiconductor – AC/DC Switching Converter Controller IC With High-Voltage Power MOS FET
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HA16138PS
Electrical Characteristics (Tj = 25°C, VDD = 12 V, fosc1 = 100 kHz)
Item
Power
MOS FET
Starter
circuit
UVL circuit
Oscillation
circuit
Error
amplifier
Power
MOS FET
gate drive
circuit
Current
sense
circuit
OVP latch
circuit
Remote
on/off circuit
Soft start
circuit
f-down
comparator
Over
temperature
protection
circuit
Symbol Min
Drain-source voltage
Drain-source on resistance
Start-up start drain voltage
Start-up charge current
Operation start power supply
voltage
BVDSS
RDS(on)
VDRN
ICHG
VTH
700

55
125
10
Operation stop power supply
voltage
VTL
7
Operating power supply current
IDD

Normal mode operating frequency fosc1
88
F-down mode operating frequency fosc2
22
Maximum on duty
Dumax 
Open-loop voltage gain
Unity gain bandwidth
AV
50
BW

Output high voltage 1
Output high voltage 2
Output low voltage
Non-inverting input voltage
Output rise time
Output fall time
Output high voltage
Output low voltage
Current sense voltage gain
Current sense response time
VCOMPH1 4.5
VCOMPH2 4.3
VCOMPL

V(+)EA
3.4
tr

tf

VOH

VOL

AVCS

tpdcs

Leading edge blanking time
OVP latch set voltage
tBL

Vovp
4.2
OVP latch reset voltage
Vovpr 
OVP latch current dissipation
Iovp

Off mode start voltage
Voff
3.6
Typ Max

12 20
75 95
250 500
11 12
8
9
2.5 4.0
100 112
25 28
70 
65 
550 
5.0 
4.8 
0.50 0.75
3.8 4.2
100 
80 
10 
0.5 
3.0 
200 
300 
5.0 5.8
4.0 
1.1 1.7
3.8 4.0
Soft start time
tst
(1.0) 2.0 (3.0)
F-down mode start voltage
Vfdcp 0.7 0.85 1.0
Over temperature protection start TSD
temperature
 150 
Unit Test Conditions
V
Ω
ID = 0.4 A
V
µA
V
V
mA
kHz CT = 220 pF
kHz CT = 220 pF, VCOMP = 0 V
%
dB Rcomp = 220 kΩ
kHz Rcomp = 220 kΩ
V
Iosource = 0 µA
V
Iosource = 100 µA
V
Iosink = 0 µA
V
ns
CL = 1000 pF
ns
CL = 1000 pF
V
Iosource = 25 mA
V
Iosink = 25 mA
V/V
ns Vcomp = 5.0 V
ns
V
Vovp: FB pin voltage
V
Vovpr: VDD pin voltage
mA VFB = 6.0 V
V
Voff: CT pin voltage
ms Time from start-up to
max. duty
V
°C TSD: Power MOS FET
junction temperature
5
 ▷