HA13156 Datasheet, PDF (5/18 Pages) Hitachi Semiconductor – 38 W x 4-Channel BTL Power IC

HA13156
Electrical Characteristics (V_CC = 13.2 V, R_L = 4 Ω, f = 1 kHz, Rg = 600 Ω, Ta = 25°C,
when there is no description in test conditions)
Item
Symbol Min
Quiescent current1
Quiescent current2
Total harmonic distortion
I_Q1
275
I_Q2
190
T.H.D.
—
Gain
G_V
30.5
Gain difference between channels ∆G_V
–1.0
Rated output power1
P_O1
20
Rated output power2
P_O2
17
Max output power1
P_OMAX1
35
Max output power2
P_OMAX2
31
Output noise voltage1
WBN1
—
Typ
380
320
0.02
32
0
23
20
38
34
0.15
Output noise voltage2
WBN2
—
0.08
Ripple rejection
Output offset voltage1
Output offset voltage2
SVR
∆V_Q1
∆V_Q2
45
55
–250 0
–250 0
Standby current
Standby control voltage (high)
Standby control voltage (low)
Muting control voltage (high)
Muting control voltage (low)
Boost control voltage (high)
Boost control voltage (low)
Muting attenuation
I_ST
—
1
V_STH
3.5
—
V_STL
0
—
V_MH
3.5
—
V_ML
0
—
V_BH
3.5
—
V_BL
0
—
ATTM
70
90
Channel cross talk
C.T.
60
80
Input impedance
Zin
18
25
Input voltage muted completly
ATTin
7
—
Note: boost on; Boost control voltage (high),
mute on; Muting control voltage (low)
Max
480
420
0.1
33.5
1.0
—
—
—
—
0.3
0.2
—
250
250
10
V_CC
1.5
V_CC
1.5
V_CC
1.5
—
—
33
—
Unit
mA
mA
%
dB
dB
W
W
W
W
mVrms
mVrms
dB
mV
mV
µA
V
V
V
V
V
V
dB
dB
kΩ
Vp-p
Test Conditions
Vin = 0 V, boost on, R_L = ∞
Vin = 0 V, boost off, R_L = ∞
Po = 3 W, boost on, off
V_CC = 13.2 V, boost on,
R_L = 4 Ω, THD = 10%
V_CC = 13.2 V, boost off,
R_L = 4 Ω, THD = 10%
V_CC = 13.7 V, boost on,
R_L = 4 Ω
V_CC = 13.7 V, boost off,
R_L = 4 Ω
Rg = 0 Ω, mute off,
BW = 20 to 20 kHz
Rg = 0 Ω, mute on,
BW = 20 to 20 kHz
f = 120 Hz
Vin = 0 V, mute off
Vin = 0 V, change value
of mute on → off
boost off
Vout = 6.7 Vrms
Vout = 6.7 Vrms
5