BB102C Datasheet, PDF (5/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Drain Current vs. Gate1 Voltege
20
V _DS = 9 V
16 ^{R G = 560 k Ω}
6V
12
5 ₄ ^VV
3V
8
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
BB102C
Drain Current vs. Gate1 Voltege
20
V _DS = 9 V
R _G = 680 k Ω
16
12
6V
54VV
3V
8
2V
4
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V_G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
6V
5V
20
4V
3V
15
2V
10
V _DS = 9 V
R _G = 470 k Ω
5
f = 1 kHz
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
25
20
6
V
5
V
4
V
3
V
15
2V
10
V _DS = 9 V
R _G = 560 k Ω
5
f = 1 kHz
V_G2S = 1 V
0
2
4
6
8
10
Gate1 Voltage V _G1 (V)
5