2SK2934 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK2934
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
I D = 15 A
10 A
0.2
5A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
10 A
0.06
V _GS = 4 V
2, 5 A
0.04
2, 5, 10 A
0.02
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
Tc = –25 °C
20
10
25 °C
5
75 °C
2
1
0.5
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
5