2SK1521 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
50 A
4
Pulse Test
3
2
20 A
1
I_D = 10 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
2SK1521, 2SK1522
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
V_GS = 10, 15 V
0.02
0.01
5 10 20
50 100 200 500
Drain Current I_D (A)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
I_D = 50 A
20 A
0.2
0.1
10 A
0
–40 0
40
80 120 160
Case Temperature T_C (°C)
Forward Transfer Admittance
vs. Drain Current
50
20
T_C = –25°C
25°C
10
75°C
5
2
1
V_DS = 20 V
Pulse Test
0.5
0.5 1 2
5 10 20 50
Drain Current I_D (A)
5