2SK1403 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I_D = 10 A
12
8
5A
4
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
V_GS = 10 V
Pulse Test
4
3
I_D = 10 A
5A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1403, 2SK1403A
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
V_GS = 10 V
2
15 V
1
0.5
0.2
0.1
0.05
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
50
V_DS = 20 V
Pulse Test
20
10
T_C = 75°C
25°C
–25°C
5
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I_D (A)
5