2SK1402 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I_D = 5 A
12
8
2A
4
1A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
V_GS = 10 V
Pulse Test
8
6
I_D = 5 A
2A
4
1A
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1402, 2SK1402A
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
V_GS = 10 V
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V T_C = –25°C
Pulse Test
25°C
5
75°C
2
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
5