2SK1342 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
Pulse Test
16
I_D = 10 A
12
8
5A
4
2A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
5
4
V_GS = 10 V
Pulse Test
3
5A
I_D = 10 A
2
2A
1
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1342
Static Drain to Source on State
Resistance vs. Drain Current
5
V_GS = 10 V
2
1
15 V
0.5
0.2
Pulse Test
0.1
0.05
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 20 V
5 ^{Pulse Test}
–25°C
T_C = 25°C
2
75°C
1
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
5