2SK1340 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
5A
16
Pulse Test
12
8
2A
4
I_D = 1 A
0
4
8
12
16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
V_GS = 10 V
Pulse Test
8
6
I_D = 5 A
2A
4
1A
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1340
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 10 V
5
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
5
–25°C
Tc = 25°C
75°C
2
1
0.5
0.2
V_DS = 20 V
Pulse Test
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current I_D (A)
5