2SK1167 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
20 A
6
4
10 A
2
I_D = 5 A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
V_GS = 10 V
Pulse Test
I_D = 20 A
0.6
10 A
0.4
5A
0.2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1167, 2SK1168
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1.0
V_GS = 10 V
0.5
0.2
15 V
0.1
0.05
1
2
5 10 20 50 100
Drain Current I_D (A)
Forward Transfer Admittance vs. Drain Current
50
V_DS = 20 V
20 ^{Pulse Test}
10
–25°C
T_C = 25°C
75°C
5
2
1.0
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current I_D (A)
5