2SJ531 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ531
Body–Drain Diode Reverse
Recovery Time
100
50
20
10
–0.1 –0.2
–0.5
di / dt = 50 A / µs
V_GS = 0, Ta = 25 °C
–1 –2 –5 –10 –20
Reverse Drain Current I _DR (A)
10000
3000
1000
300
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
30
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V_DD = –10 V
–25 V
–20
–50 V
–4
–40
V_GS
V_DS
–60
V_DD = –50 V
–25 V
–80
–10 V
–100 ^{I D = –18 A}
0
16 32 48 64
Gate Charge Qg (nc)
–8
–12
–16
–20
80
1000
500
Switching Characteristics
V_GS = –10 V, V _DD = –30 V
PW = 5 µs, duty < 1 %
t _d(off)
200
tf
100
50
tr
20
t _d(on)
10
–0.1 –0.2 –0.5 –1 –2 –5 –10 –20
Drain Current I _D (A)
5