2SC4196 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

S Parameters (Emitter Common)
2SC4196
Test condition V_CE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), Z_O = 50 Ω
I_C = 5 mA
I_C = 10 mA
0.4
0.2
S11-Frequency
0.8 ¹
0.6
1.5
2
3
4
5
10
0
0.2 0.4 0.6 0.8 1 1.5 2 3 4 5 10 _∞
150°
180°
–0.2
–0.4
–0.6
–0.8 _–1
–10
–5
–4
–3
–150°
–2
–1.5
120°
S21-Frequency
90°
Scale : 4/div
60°
30°
0°
–120°
–90°
–30°
–60°
150°
180°
–150°
120°
S12-Frequency
90°
Scale : 0.04/div
60°
0.4
30°
0.2
S22-Frequency
0.8 ¹
0.6
1.5
2
3
4
5
0° 0
0.2 0.4 0.6 0.8 1
10
1.5 2 3 4 5 10 _∞
–120°
–90°
–60°
–0.2
–30°
–0.4
–0.6
–0.8 _–1
–10
–5
–4
–3
–2
–1.5
5