HM62W16258BI Datasheet, PDF (4/16 Pages) Hitachi Semiconductor – 4 M SRAM (256-kword x 16-bit)

HM62W16258BI Series
Operation Table
CS WE OE UB LB
H
×
×
×
×
×
×
×
H
H
L
H
L
L
L
L
H
L
H
L
L
H
L
L
H
L
L
×
L
L
L
L
×
H
L
L
L
×
L
H
L
H
H
×
×
Note: H: V_IH, L: V_IL, ×: V_IH or V_IL
I/O0 to I/O7
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
I/O8 to I/O15
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Read
Lower byte read
Upper byte read
write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V_SS
Terminal voltage on any pin relative to V_SS
Power dissipation
Storage temperature range
V_CC
V_T
P_T
Tstg
Storage temperature range under bias
Tbias
Notes: 1. V_T min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
Value
–0.5 to + 4.6
–0.5*¹ to V_CC + 0.3*²
1.0
–55 to +125
–40 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
V_CC
V_SS
Input high voltage
V_IH
Input low voltage
V_IL
Ambient temperature range
Ta
3.0
3.3
0
0
2.2
—
–0.3
—
–40
—
Note: 1. V_IL min: –3.0 V for pulse half-width ≤ 30 ns.
Max
3.6
0
V_CC + 0.3
0.6
85
Unit
V
V
V
V
°C
Note
1
4