H5N2005DL Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

H5N2005DL, H5N2005DS
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain
current
V_DSS
V_GSS
I_D
I ^{Note 1}
D (pulse)
I _DR
Body-drain diode reverse drain peak
current
I Note 1
DR (pulse)
Channel dissipation
Pch ^{Note 2}
Channel to case thermal impedance θ ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Ratings
200
±30
(6)
(24)
(6)
(24)
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
2