2SK3148 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK3148
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.5
Pulse Test
2.0
1.5
1.0
I D = 15 A
0.5
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
V_GS = 4 V
50
10 V
20
10
12
5 10 20 50 100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200
150
5,10 A
15 A
100
V _GS = 4 V
50
15 A
5,10 A
10 V
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25 °C
10
25 °C
75 °C
5
2
1
0.5
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
4