2SK1698 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1698
Power vs. Temperature Derating
1.5
1.0
0.5
0
50
100
150
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
5
3
1
0.3
0.1
0.03
0.01
0.005
0.1 0.3
PW
Ta = 25^DC°C^{Operat=io1n0(Tmcs=(125s°hCo)t)}
1 3 10 30 100
Drain to Source Voltage V_DS (V)
4