2SK1618 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1618(L), 2SK1618(S)
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Maximum Safe Operation Area
10
5
2
1
0.5
0.2
PW
=
10
ms
(1
10
100 _µs
Shot _Pulse)
µ_s
0.1
0.05
0.02 _{Ta = 25°C}
0.01
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
T_C = 25°C
0.3
0.2
0.1
0.1 _0.05
0.02
0.03 _{0.011Shot Pulse}
0.01
10 µ
100 µ
θch–c (t) = γ_S (t) · θch–c
θch–c = 4.17°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4