2SK1519 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1519, 2SK1520
Power vs. Temperature Derating
300
200
100
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
50
6V
Pulse Test
10 V
5V
40
30
4.5 V
20
10
V_GS = 4 V
0
4
8
12
16
20
Drain to Source Voltage V_DS (V)
1,000
Maximum Safe Operation Area
300
100
30
10
3
OpiselriamtiiotendinbytDhRiCs^DaOSre(_p^oaPn_e^{) Wrati=on10(Tms1(1m1S0s0h1o0µ}_ts)^µs
1
C _{= 25°C)}
0.3
0.1
1
Ta = 25°C
2SK1519
2SK1520
3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
50
V_DS = 10 V
Pulse Test
40
30
20
T_C = 75°C
25°C
10
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4