2SK1405 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1405
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
20
10 V _{6 V}
5V
16
Pulse Test
12
4.5 V
8
4
V_GS = 4 V
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
100
30
10
3
1
0.3
OpiserliamtiiotendinbythRis
D^aSre(oan)
PW
DC _{Op=er1a0tiomns((T11}
C
1001_µ^0sµ_s
ms
S=h2o5t _°pCul)se)
0.1
0.03 _{Ta = 25°C}
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
20
V_DS = 10 V
Pulse Test
16
12
8
T_C = 75°C
25°C
4
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4