2SK1341 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1341
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10
10 V
Pulse Test
8
6V
5.5 V
6
5V
4
4.5 V
2
V_GS = 4 V
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
20
10
5
2
1
0.5
PW
100
10
µ_s
µ_s
= _{10 ms (1 Shot)}
0.2
Ta = 25°C
0.1
0.05
1 3 10 30 100 300 1,000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 20 V
Pulse Test
4
3
2
75°C
Ta = 25°C
1
–25°C
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
4