2SK1337 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1337
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 0.5 A
1
0.2 A
0.1 A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
10
Pulse Test I_D = 0.5 A
8
0.2 A
0.1 A
0.2 A
6
V_GS = 4 V
4
0.5 A ^{0.1 A}
V_GS = 10 V
2
0
–40 0
40 80 120 160
Case Temperature T_C (°C)
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
V_GS = 4 V
5
10 V
2
1
0.5
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
5
V_DS = 10 V
2 ^{Pulse Test}
1
T_C = –25°C
25°C
0.5
75°C
0.2
0.1
0.05
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I_D (A)
4