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2SK1307 Datasheet, PDF (4/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1307
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
100 µs
10
3
1.0
Operation in this Area
is Limited by RDS (on)
0.3
Ta = 25°C
0.1
1
3 10 30 100 300 1,000
Drain to Source Voltage VDS (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1 Shot
Pulse
0.01
10 µ
100 µ
θchâc (t) = γS (t) · θchâc
θchâc = 3.57°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
4
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