2SJ546 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET High Speed Power Switching

2SJ546
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–4.0
1VMTF
5FTU
–3.2
–2.4
–1.6
I D = –15 A
–0.8
–10 A
–5 A
0
–4 –8 –12 –16 –20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
1VMTF
5FTU
3
1
0.3
V_GS = –4 V
0.1
–10 V
0.03
0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.40
1VMTF
5FTU
0.32
0.24
I D = –15 A –10 A –5 A
0.16 V_GS = –4 V
0.08
0
–40
–10 V
–5, –10, –15 A
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
V _DS = –10 V
30 ^1VMTF
5FTU
Tc = –25 °C
10
3
25 °C
1
75 °C
0.3
0.1
–0.1 –0.3 –1 –3 –10 –30 –100
Drain Current I _D (A)
4