2SH31 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N Channel IGBT High Speed Power Switching

2SH31
Typical Transfer Characteristics
100
V _CE = 10 V
Pulse Test
80
60
40
Tc = 75°C
20
–25°C
25°C
0
4
8
12 16 20
Gate to Emitter Voltage V GE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
5
Pulse Test
4
3
I_C = 75 A
2
50 A
25 A
1
0
4
8
12 16 20
Gate to Emitter Voltage V _GE (V)
Collecot to Emitter Saturation Voltage
vs. Collector Current
10
5
100000
30000
Typical Capacitance vs.
Collecotor to Emitter Voltage
VGE = 0
f = 1 MHz
2
–25°C ^25°C
1
Tc = 75°C
0.5
0.2 _{V GE = 15 V}
Pulse Test
12
5 10 20 50 100
Collector Current I _C (A)
10000
3000
Cies
1000
300
Coes
100
50
0
10
20 30
Collector to Emitter Voltage
Cres
40 50
V _CE (V)
4