2SH12 Datasheet, PDF (4/8 Pages) Hitachi Semiconductor – Silicon N-Channel IGBT

2SH12
Typical Transfer Characteristics
50
40
30
Tc = –25 °C
20
25 °C
75 °C
10
Pulse Test
VCE = 10 V
0
4
8
12 16 20
Gate to Emitter Voltage V _GE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
10
10 A
8
5A
IC = 15 A
6
4
2
Pulse Test
0
4
8
12 16 20
Gate to Emitter Voltage V _GE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
50
Pulse Test
VGE = 15 V
20
10
Tc =75 °C
5
25 °C
–25 °C
2
1
0.51
2
5 10 20 50 100
Collector Current I_C (A)
10000
Typical Capacitance vs.
Collector to Emitter Voltage
1000
Cies
100
Coes
V_GE = 0
Cres
f = 1 MHz
10
0
10 20 30
40 50
Collector to Emitter Voltage VCE (V)
4