PF0030 Datasheet, PDF (3/19 Pages) Hitachi Semiconductor – MOS FET Power Amplifier

PF0030 Series
Electrical Characteristics (Ta = 25°C)
Item
Drain cutoff current
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Output VSWR
Stability
Symbol Min Typ Max Unit
I _DS
—
η_T
35
2nd H.D. —
—
500 µA
40
—
%
–50 –30 dB
3rd H.D. —
–50 –30 dB
VSWR (in) —
1.5 3
—
VSWR (out) —
1.5 —
—
—
No parasitic oscillation —
Test Condition
V_DD = 17 V, V_APC = 0 V
Pin = 2 mW,
V_DD = 12.5 V,
Pout = 6 W (at APC controlled)
Zin = Zout = 50 Ω
Pin = 2 mW, V_DD = 12.5 V,
Pout = 6 W (at APC controlled),
Zin = 50 Ω,
Output VSWR = 20:1 All phases,
t = 20 sec
Test System Diagram
S.G
L.P.F ^3dB
ATT
Power
Meter
Directional
Coupler
V_APC V_DD
Test
Fixture
Spectrum
Analyzer
Directional
Coupler
Power Meter
3