HRP32 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Rectifying

Main Characteristic
HRP32
1.4
D=1/6
1.2
Sin
1.0
D=1/3
D=1/2
0.8
DC
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Average rectified current I_o (A)
Fig.1 Forward power dissipation Vs. Average rectified current
5
D=5/6
4
D=2/3
3
D=1/2
2
Sin
1
0
0 20 40 60 80 100 120
Reverse voltage V _R(V)
Fig.2 Reverse power dissipation Vs. Reverse voltage
1.2
1.0
DC
D=1/2
0.8
0.6
D=1/6
0.4
0.2
5mm
2 mm
2 mm
Print Board
Rth=153°C/W
V_R=45V
Tj=125°C
D=1/3
Sin
0
-25 0 25 50 75 100 125 150
Ambient temperature Ta (°C)
Fig.3 Average forward current Vs. Ambient temperature
f=1MHz
Pulse test
3
10
2
10
10
1.0
10
10²
Reverse voltage V _R (V)
Fig.4 Capacitance Vs. Reverse voltage
3