|
BB404M Datasheet, PDF (3/11 Pages) Hitachi Semiconductor – Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |||
|
◁ |
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG1
RG
Gate 1
VG2
Gate 2
BB404M
Source
Drain
A
ID
Power Gain, Noise Figure Test Circuit
VT
1000p
VG2
1000p
VT
1000p
Input (50â¦)
1000p
1000p 47k
47k
BBFET
L1
36p
1000p
1SV70
R G 180k (VD=5V)
470k (VD=9V)
47k
L2
1000p
Output (50â¦)
10p max
RFC
1SV70
1000p
V D = V G1
Unit Resistance (â¦)
Capacitance (F)
L1 :Ï1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :Ï1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :Ï1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
.
3
|
▷ |