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2SK1869 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1869(L), 2SK1869(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
V(BR)DSS
350
â
voltage
Gate to source breakdown
voltage
V(BR)GSS
±30
â
Gate to source leak current IGSS
â
â
Zero gate voltage drain current IDSS
â
â
Gate to source cutoff voltage VGS(off)
2.0
â
Static drain to source on state RDS(on)
â
0.6
resistance
Forward transfer admittance |yfs|
3.0 5.0
Input capacitance
Ciss
â
Output capacitance
Coss â
Reverse transfer capacitance Crss
â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward VDF
â
voltage
Body to drain diode reverse trr
â
recovery time
Note 1. Pulse Test
635
230
40
10
50
60
40
0.95
240
Max
â
â
±10
250
3.0
0.8
â
â
â
â
â
â
â
â
â
â
Unit
V
V
µA
µA
V
â¦
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS =280 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 7.5â¦
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1400A
3
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