2SK1859 Datasheet, PDF(3/6 Page) Hitachi Semiconductor

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2SK1859 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1859

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min Typ Max

Drain to source breakdown

V(BR)DSS

900

voltage

Gate to source breakdown

V(BR)GSS

Â±30

voltage

Gate to source leak current IGSS

Â±10

Zero gate voltage drain current IDSS

250

Gate to source cutoff voltage VGS(off)

2.0

3.0

Static drain to source on state RDS(on)

resistance

2.0

3.0

Forward transfer admittance |yfs|

2.3

3.7

Input capacitance

Ciss

Output capacitance

Coss â

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse Test

980 â

400 â

195 â

125 â

100 â

0.9

1000 â

Unit

ÂµA

â¦

Test conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

VGS = Â±25 V, VDS = 0

VDS = 720 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 3 A

VGS = 10 V*1

ID = 3 A

VDS = 20 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 3 A

VGS = 10 V

RL = 10 â¦

IF = 6 A, VGS = 0

IF = 6 A, VGS = 0,

diF / dt = 100 A / Âµs

See characteristic curves of 2SK1341

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