|
2SK1775 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
|
◁ |
2SK1775
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Drain to source breakdown
V(BR)DSS
900
â
â
voltage
Gate to source breakdown
V(BR)GSS
±30
â
â
voltage
Gate to source leak current IGSS
â
â
±10
Zero gate voltage drain current IDSS
â
â
250
Gate to source cutoff voltage VGS(off)
2.0
â
3.0
Static drain to source on state RDS(on)
â
resistance
1.2
1.6
Forward transfer admittance |yfs|
3.5
5.5
â
Input capacitance
Ciss
â
Output capacitance
Coss â
Reverse transfer capacitance Crss
â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward VDF
â
voltage
Body to drain diode reverse trr
â
recovery time
Note 1. Pulse Test
1730 â
700 â
310 â
25
â
135 â
185 â
130 â
0.9
â
900 â
Unit
V
V
µA
µA
V
â¦
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 720 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VDS = 20 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 7.5 â¦
IF = 8 A, VGS = 0
IF = 8 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1342
3
|
▷ |