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2SK1762 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
2SK1762
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
250
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
—
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage VGS(off)
2.0
Static drain to source on state RDS(on)
—
resistance
Forward transfer admittance |yfs|
5.0
Typ
—
—
—
—
—
0.23
8.0
Max
—
—
±10
250
3.0
0.35
—
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse Test
1100 —
440 —
68
—
20
—
65
—
100 —
44
—
1.0
—
200 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 6 A
VGS = 10 V*1
ID = 6 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 6 A
VGS = 10 V
RL = 5 Ω
IF = 12 A, VGS = 0
IF = 12 A, VGS = 0,
diF / dt = 100 A / µs
See characteristic curves of 2SK1761.
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