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2SK1697 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET
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2SK1697
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 60
Gate to source breakdown
voltage
V(BR)GSS ±20
Gate to source leak current
I GSS
—
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage VGS(off) 1.0
Static drain to source on state RDS(on) —
resistance
—
Forward transfer admittance |yfs|
Input capacitance
Ciss
0.25
—
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse test
Typ
—
—
—
—
—
1.3
1.8
0.38
30
13
4
3
8
18
14
1
45
Max
—
—
±10
50
2.0
1.7
2.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 50 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 0.3 A, VGS = 10 V *1
ID = 0.3 A, VGS = 4 V *1
ID = 0.3 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 0.3 A, VGS = 10 V,
RL = 100 Ω
IF = 0.5 A, VGS = 0
IF = 0.5 A, VGS = 0,
diF/dt = 50 A/µs
See characteristic curve of 2SK1336.
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