2SK1624 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1624(L), 2SK1624(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Drain to source breakdown
voltage
V_(BR)DSS 600
—
Gate to source breakdown
voltage
V_(BR)GSS ±30
—
Gate to source leak current
I _GSS
—
—
Zero gate voltage drain current I_DSS
—
—
Gate to source cutoff voltage V_GS(off) 2.0
—
Static Drain to source on state R_DS(on) —
1.8
resistance
Forward transfer admittance |yfs|
2.2
3.5
Input capacitance
Ciss —
600
Output capacitance
Coss —
140
Reverse transfer capacitance Crss —
25
Turn-on delay time
t _d(on)
—
8
Rise time
t_r
—
30
Turn-off delay time
t _d(off)
—
60
Fall time
t_f
—
35
Body to drain diode forward V_DF
—
0.9
voltage
Body to drain diode reverse t_rr
recovery time
—
300
Note 1. Pulse test
Max Unit
—
V
—
V
±10 µA
250 µA
3.0
V
2.4
Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
—
V
—
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 500 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 2 A, V_GS = 10 V *¹
I_D = 2 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 2 A, V_GS = 10 V,
R_L = 15 Ω
I_F = 4 A, V_GS = 0
I_F = 4 A, V_GS = 0,
di_F/dt = 100 A/µs
See characteristic curves of 2SK1402.
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