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2SK1161 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET | |||
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2SK1161, 2SK1162
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1161 V(BR)DSS 450
breakdown voltage 2SK1162
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
â
Zero gate voltage 2SK1161 IDSS
â
drain current
2SK1162
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1161 RDS(on) â
on state resistance 2SK1162
â
Forward transfer admittance |yfs|
4.0
Input capacitance
Ciss â
Output capacitance
Coss â
Reverse transfer capacitance Crss â
Turn-on delay time
t d(on)
â
Rise time
tr
â
Turn-off delay time
t d(off)
â
Fall time
tf
â
Body to drain diode forward
VDF
â
voltage
Body to drain diode reverse
t rr
â
recovery time
Note: 1. Pulse test
Typ Max Unit
â
â
V
â
â
V
â
±10 µA
â
250 µA
â
3.0
V
0.6
0.8
â¦
0.7
0.9
7.0
â
S
1050 â
pF
280 â
pF
40
â
pF
15
â
ns
60
â
ns
90
â
ns
45
â
ns
1.0
â
V
350 â
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 5 A, VGS = 10 V *1
ID = 5 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 5 A, VGS = 10 V,
RL = 6 â¦
IF = 10 A, VGS = 0
IF = 10 A, VGS = 0,
diF/dt = 100 A/µs
See characteristic curves of 2SK1157, 2SK1158.
3
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