2SK1095 Datasheet, PDF (3/3 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1095
Power vs. Temperature Derating
60
40
20
0
50
100
150
Case Temperature T_C (°C)
Maximum Safe Operation Area
500
300
100
30
10
OpaerrbeayatioRisn^{DliiSmn (itotheni)ds}
1 _ms
3
1.0
0.5
1
Ta = 25°C
0.3 1.0 3 10 30 100
Drain to Source Voltage V_DS (V)
3
1.0
D=1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3
0.2
0.1
0.1
0.05
0.03
0.01
10 µ
00.0.021
1
Shot
Pulse
100 µ
θch–c(t) = γ_S(t) · θch–c
θch–c = 4.17°C/W, T_C = 25°C
P_DM
D
=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)