|
2SJ294 Datasheet, PDF (3/3 Pages) Hitachi Semiconductor – Silicon P Channel MOS FET | |||
|
◁ |
2SJ294
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
â200
â100
â50
â20
â10
â5
â2
â1
â0.5
OtlihmpisietearadretiboaynisDRinCDOSp(oePrnWa)tio=n1(T0cm=1s21m(501s0°sChµ1)os0t)µs
â0.2 Ta = 25 °C
â1 â2 â5 â10 â20 â50 â100
Drain to Source Voltage V DS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θch â c(t) = γ s (t) ⢠θ ch â c
θch â c = 3.57 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
|