2SH20 Datasheet, PDF (3/8 Pages) Hitachi Semiconductor – Silicon N-Channel IGBT

2SH20
Power vs. Temperature Derating
200
150
100
Maximum Safe Operation Area
100
10
(TDcC=O2p^P_5e^W_°raC⁼_t)io⁽¹¹_n^10shmm_os^s_t)
100 _µs
1
50
0
50
100
150 200
Case Temperature Tc (°C)
0.1
Ta = 25 °C
0.01
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Reverse Bias SOA
100
10
1
Tc = 25 °C
0.1
0
200
400
600 800
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
100
Pulse Test
Ta = 25 °C
80
V_GE = 15 V 12 V
60
40
10 V
20
8V
6V
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
3