|
2SC2855 Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial | |||
|
◁ |
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25°C)
2SC2855
2SC2856
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 90
â
â
120 â
â
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 90
â
â
120 â
â
V
IC = 1 mA, RBE = â
Emitter to base
breakdown voltage
V 5 (BR)EBO
â â5
ââ V
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
I CBO
I EBO
hFE*1
VCE(sat)
â â 0.1 â â 0.1 µA
â â 0.1 â â 0.1 µA
250 â 800 250 â 800
â 0.05 0.10 â 0.05 0.10 V
VCB = 70 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA*2
IC = 10 mA, IB = 1 mA*2
Base to emitter saturation VBE(sat) â
voltage
0.7 1.0 â
0.7 1.0 V
Gain bandwidth product fT
Collector output
Cob
capacitance
â 310 â â 310 â MHz VCE = 6 V, IC = 10 mA
â 3 â â 3 â pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
â 0.15 1.5 â 0.15 1.5
â 0.2 2.0 â 0.2 2.0
Noise voltage referred to en
input
â 0.7 â â 0.7 â
Notes: 1. The 2SC2855 and 2SC2856 are grouped by hFE as follows.
2. Pulse test
D
E
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kâ¦, f = 1 kHz
dB
VCE = 6 V, IC = 0.1 mA,
Rg = 10 kâ¦, f = 10 Hz
nV/âHz VCE = 6 V, IC = 10 mA,
Rg = 0, f = 1 kHz
250 to 500 400 to 800
3
|
▷ |