2SB1028 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Maximum Collector Dissipation Curve
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (°C)
–500
–100
Typical Transfer Characteristics
V_CE = –5 V
Pulse
–10
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage V_BE (V)
2SB1028
Typical Output Characteristics
–1.0
–0.8
–4–.–303.–5.20.5
Pulse
–0.6
–2.0
–1.5
–0.4
–1.0
–0.2
–0.5 ^mA
I_B = 0
0
–10 –20 –30 –40 –50
Collector to Emitter Voltage V_CE (V)
1,000
300
DC Current Transfer Ratio vs.
Collector Current
V_CE = –5 V
Pulse
100
30
10
–10
–30 –100 –300 –1,000
Collector Current I_C (mA)
3