2SA1810 Datasheet, PDF (3/6 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Maximum Collector Dissipation Curve
12
8
4
0
50
100
150
Case Temperature T_C (°C)
–200
Typical Output Characteristics
–160
T_C = 25°C
–120
–80
–40
––1––1.128.4..00––1–1.–60.02..68
–0.4
–0.2 mA
I_B = 0
0
–2
–4
–6
–8 –10
Collector to emitter Voltage V_CE (V)
2SA1810
Area of Safe Operation
–1.0
1 Shot pulse
–0.5
Ta = 25°C
–0.2
–0.1
–0.05
–0.02
–0.01
–10 –20 –50 –100 –200 –500 –1000
Collector to emitter Voltage V_CE (V)
1,000
500
DC Current Transfer Ratio vs.
Collector Current
V_CE = –5 V
Pulse
200
T_C = 75°C
25°C
100
–25°C
50
20
10
–1 –2 –5 –10 –20 –50 –100–200
Collector current I_C (mA)
3